应用于光伏级奇克拉尔斯基硅的高效电池结构和工艺

J. Gee, R. King, K. Mitchell
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引用次数: 6

摘要

我们进行了一项详细的研究,以检查使用“光伏级”Cz硅的极限性能。光伏级硅是指光伏行业生产的硅,其杂质和缺陷浓度可能与半导体器件行业使用的硅不同。该研究包括制造工艺的优化、先进器件结构的开发以及详细的模型计算,以预测未来性能的改进。工艺和设备优化导致了75-/spl mu/s的体积寿命和17.6%的高效大面积电池使用光伏级Cz硅。在材料和器件评价的基础上,详细计算了目前工作项目效率为20%的光伏级Cz硅,并适当优化了工艺和器件结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-efficiency cell structures and processes applied to photovoltaic-grade Czochralski silicon
We performed a detailed study to examine the limiting performance available using "photovoltaic-grade" Cz silicon. Photovoltaic-grade silicon refers to silicon produced by the photovoltaic industry, which may differ from the silicon used in the semiconductor device industry in impurity and defect concentrations. The study included optimization of fabrication processes, development of advanced device structures, and detailed model calculations to project future performance improvements. Process and device optimization resulted in demonstration of 75-/spl mu/s bulk lifetimes and 17.6% efficient large-area cells using photovoltaic-grade Cz silicon. Detailed calculations based on the material and device evaluation of the present work project efficiencies of 20% for photovoltaic-grade Cz silicon with properly optimized processing and device structures.
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