{"title":"220GHz InP DHBT压控振荡器","authors":"Fengchun Ge, Lei Wang, B. Yan","doi":"10.1109/ICCPS.2015.7454168","DOIUrl":null,"url":null,"abstract":"In this paper, a monolithic 220GHz Voltage-Controlled Oscillators is presented by using 0.5μm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology. The varactor of the Oscillator is achieved by a HBT transistor whose base connects with the collector. The simulated output power is -2.4 dBm. Due to the selection small capacity of the transistor, the oscillation frequency can be tuned between 221.3 and 221.9 GHz when the tuning voltage is between 0 and 2V. A phase noise of -92 dBc/Hz is achieved at 10MHz offsets. The chip area is 0.87mm×0.61mm.","PeriodicalId":319991,"journal":{"name":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"220GHz InP DHBT Voltage-Controlled Oscillators\",\"authors\":\"Fengchun Ge, Lei Wang, B. Yan\",\"doi\":\"10.1109/ICCPS.2015.7454168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a monolithic 220GHz Voltage-Controlled Oscillators is presented by using 0.5μm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology. The varactor of the Oscillator is achieved by a HBT transistor whose base connects with the collector. The simulated output power is -2.4 dBm. Due to the selection small capacity of the transistor, the oscillation frequency can be tuned between 221.3 and 221.9 GHz when the tuning voltage is between 0 and 2V. A phase noise of -92 dBc/Hz is achieved at 10MHz offsets. The chip area is 0.87mm×0.61mm.\",\"PeriodicalId\":319991,\"journal\":{\"name\":\"2015 IEEE International Conference on Communication Problem-Solving (ICCP)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Conference on Communication Problem-Solving (ICCP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCPS.2015.7454168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Conference on Communication Problem-Solving (ICCP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCPS.2015.7454168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, a monolithic 220GHz Voltage-Controlled Oscillators is presented by using 0.5μm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology. The varactor of the Oscillator is achieved by a HBT transistor whose base connects with the collector. The simulated output power is -2.4 dBm. Due to the selection small capacity of the transistor, the oscillation frequency can be tuned between 221.3 and 221.9 GHz when the tuning voltage is between 0 and 2V. A phase noise of -92 dBc/Hz is achieved at 10MHz offsets. The chip area is 0.87mm×0.61mm.
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