>110 GHz高功率光电二极管倒装键合

2022 IEEE International Topical Meeting on Microwave Photonics (MWP) Pub Date : 2022-10-01 DOI:10.1109/MWP54208.2022.9997642

Chaojiong Wei, Xiaojun Xie, Yongtao Du, Ziyun Wang, J. Ye, Z. Zeng, X. Zou, Lian-shan Yan

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引用次数: 1

摘要

我们在金刚石基板上用倒装键合的方法，实验证明了>110 GHz电荷补偿修正单行载流子(CC-MUTC)光电二极管。在−3 V偏置电压下，典型的暗电流为~200 nA，测量的响应度达到0.15 A/W。直径为6 μm、8 μm和10 μm的光电二极管的3db带宽分别为>、110ghz、90ghz和80ghz。室温下，90 GHz时射频输出功率达到8.4 dBm。

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>110 GHz High-Power Photodiode by Flip-Chip Bonding

We experimentally demonstrate >110 GHz charge-compensated modified uni-traveling carrier (CC-MUTC) photodiodes by flip-chip bonding on diamond submount. The typical dark current is ~200 nA at −3 V bias voltage and the measured responsivity reaches 0.15 A/W. Photodiodes with 6-μm, 8-μm, and 10-μm diameter exhibit 3-dB bandwidths of >110 GHz, 90 GHz, and 80 GHz, respectively. The RF output power reaches 8.4 dBm at 90 GHz at room temperature.

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2022 IEEE International Topical Meeting on Microwave Photonics (MWP)

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