印度东北地区四种光伏技术的技术经济效益分析

P. Dash, N C Gupta, P. Rani, Suprava Chakraborty, P K Sadhu
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引用次数: 3

摘要

本文详细分析了梅加拉亚邦图拉地区可用的太阳辐射资源,并对非晶硅(a- si)、多晶硅(mC-Si)、非均质本质薄膜(HiT)和碲化镉(CdTe)等四种光伏(PV)技术进行了技术经济性能分析。研究表明,在每年接收到的全球水平辐射总量中,扩散成分的贡献超过50%。此外,白天的温度分布表明,60%的时间PV组件将处于高于标准测试条件温度25℃的温度。四种光伏技术的年发电量(AEG)显示,就装机容量而言,碲化镉具有最大的发电能力,而mCSi技术的最低平准化能源成本(LCOE)估计在3.11卢比/千瓦时的范围内。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Techno-Economic Performance Analysis of Four Photovoltaic Technology at North-East Region of India
This paper presents a detailed analysis of solar radiation resources available at Tura, Meghalaya and the techno-economic performance analysis of four photovoltaic (PV) technologies such as Amorphous Silicon (a-Si), Multi-Crystalline Silicon (mC-Si), Heterogeneous Intrinsic Thin film (HiT) and Cadmium Telluride (CdTe). The study reveals that, out of the total global horizontal radiation received annually the diffused component contributes more than 50 percent. Further the daytime temperature distribution reveals that, 60 percent of time the PV Module will be at a temperature higher than the standard test condition temperature of 25oC. The Annual energy generation (AEG) from four PV technology shows that, CdTe has the maximum generating capacity in terms of unit capacity installed and the lowest Levelised Cost of Energy (LCOE) is estimated for mCSi technology in the range of Rs. 3.11/kWh.
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