{"title":"FMCW防撞雷达前端","authors":"J. Chunguang, Yang Xiaobo","doi":"10.1109/ICMMT.2000.895748","DOIUrl":null,"url":null,"abstract":"The design and performance of a low cost X-band front-end of an FMCW anticollision radar which mainly consists of VCO, buffer, circulator and mixer is described in this paper. It operates at 9 GHz with over 300 MHz linear tuning range. The excellent GaAs MESFET voltage controlled oscillator has a good balance between the high output power and wide tuning range. A GaAs FET balanced resistive mixer is used in this circuit which provides the low intermodulation and low 1/f noise even at the very low IF (to tens of Hz). All of these features are very suitable for the application of this kind of radar.","PeriodicalId":354225,"journal":{"name":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A front-end of FMCW anticollision radar\",\"authors\":\"J. Chunguang, Yang Xiaobo\",\"doi\":\"10.1109/ICMMT.2000.895748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and performance of a low cost X-band front-end of an FMCW anticollision radar which mainly consists of VCO, buffer, circulator and mixer is described in this paper. It operates at 9 GHz with over 300 MHz linear tuning range. The excellent GaAs MESFET voltage controlled oscillator has a good balance between the high output power and wide tuning range. A GaAs FET balanced resistive mixer is used in this circuit which provides the low intermodulation and low 1/f noise even at the very low IF (to tens of Hz). All of these features are very suitable for the application of this kind of radar.\",\"PeriodicalId\":354225,\"journal\":{\"name\":\"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2000.895748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2000.895748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design and performance of a low cost X-band front-end of an FMCW anticollision radar which mainly consists of VCO, buffer, circulator and mixer is described in this paper. It operates at 9 GHz with over 300 MHz linear tuning range. The excellent GaAs MESFET voltage controlled oscillator has a good balance between the high output power and wide tuning range. A GaAs FET balanced resistive mixer is used in this circuit which provides the low intermodulation and low 1/f noise even at the very low IF (to tens of Hz). All of these features are very suitable for the application of this kind of radar.