化学束外延生长InGaAs/AlAs/InGaAsP共振隧道双极晶体管

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303098

W. Chen, G. Munns, D. Knightly, J. East, G. Haddad

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引用次数: 1

摘要

首次利用化学束外延技术对谐振隧道双极晶体管进行了系统的研究。所研究的RTBT结构是一种基于inp的晶体管，由传统异质结双极晶体管(HBT)的发射极层和InGaAs或InGaAsP集电极层中的单个或多个AlAs/In/sub 0.75/Ga/sub 0.25/As/AlAs RTD组成。使用InGaAsP集电极层，RTBT的击穿电压从4 V提高到10 V。在300 K和77 K时，平均DC /spl beta/ s分别约为10和20。在传输I-V特性中，RTBT在300 K时表现出1 ~ 4个负差分跨导(NDT)峰，峰谷电流比为1.5 ~ 5.28。利用这些无损检测峰，在室温下演示了几个RTBT数字功能，包括频率乘法器和专用NOR门

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InGaAs/AlAs/InGaAsP resonant tunneling bipolar transistors grown by chemical beam epitaxy

Resonant tunneling bipolar transistors (RTBT's) have been systematically studied using chemical beam epitaxy (CBE) for the first time. The RTBT structure studied is a InP-based transistor, consisting of single or multiple AlAs/In/sub 0.75/Ga/sub 0.25/As/AlAs RTD's in the emitter layer of a conventional heterojunction bipolar transistor (HBT) and an InGaAs or InGaAsP collector layer. Using the InGaAsP collector layer, the RTBT showed an improvement of breakdown voltage from 4 V to 10 V. The averaged DC /spl beta/'s are around 10 and 20 at 300 K and 77 K, respectively. In the transfer I-V characteristics, the RTBT showed 1 to 4 negative differential transconductance (NDT) peaks with peak-to-valley current ratios of 1.5 to 5.28 at 300 K. Using such NDT peaks, several RTBT digital functions were demonstrated at room temperature, including a frequency multiplier and exclusive NOR gate.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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