Alessandro Novello, Gabriele Atzeni, Giorgio Cristiano, Mathieu Coustans, Taekwang Jang
{"title":"基于电磁耦合d类LC振荡器的2.3GHz全集成DC-DC变换器，在22nm FDSOI CMOS中实现78.1%的效率","authors":"Alessandro Novello, Gabriele Atzeni, Giorgio Cristiano, Mathieu Coustans, Taekwang Jang","doi":"10.23919/VLSICircuits52068.2021.9492491","DOIUrl":null,"url":null,"abstract":"A fully integrated DC-DC converter based on electromagnetically coupled class-D LC oscillators achieving 0.42-3.2W/mm2 power density and 69.4-78.1% efficiency is demonstrated in a 22nm FDSOI CMOS technology. This work proposes on-chip 8-shaped and vertically stacked transformers, which are orthogonally placed for the high-power density, low undesired coupling coefficient and small electromagnetic interference (EMI) radiation. In addition, the output ripple is <10mV without attaching any output capacitor thanks to the 4-phase electromagnetic power delivery scheme. The converter also offers a duty cycled operation mode that enables <2% efficiency degradation down to 100μW. The total chip area is 0.59mm2 for 5.9nH inductance (high efficiency version) and 0.22mm2 for 3.9nH (high power density versions).","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 2.3GHz Fully Integrated DC-DC Converter based on Electromagnetically Coupled Class-D LC Oscillators achieving 78.1% Efficiency in 22nm FDSOI CMOS\",\"authors\":\"Alessandro Novello, Gabriele Atzeni, Giorgio Cristiano, Mathieu Coustans, Taekwang Jang\",\"doi\":\"10.23919/VLSICircuits52068.2021.9492491\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated DC-DC converter based on electromagnetically coupled class-D LC oscillators achieving 0.42-3.2W/mm2 power density and 69.4-78.1% efficiency is demonstrated in a 22nm FDSOI CMOS technology. This work proposes on-chip 8-shaped and vertically stacked transformers, which are orthogonally placed for the high-power density, low undesired coupling coefficient and small electromagnetic interference (EMI) radiation. In addition, the output ripple is <10mV without attaching any output capacitor thanks to the 4-phase electromagnetic power delivery scheme. The converter also offers a duty cycled operation mode that enables <2% efficiency degradation down to 100μW. The total chip area is 0.59mm2 for 5.9nH inductance (high efficiency version) and 0.22mm2 for 3.9nH (high power density versions).\",\"PeriodicalId\":106356,\"journal\":{\"name\":\"2021 Symposium on VLSI Circuits\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSICircuits52068.2021.9492491\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSICircuits52068.2021.9492491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.3GHz Fully Integrated DC-DC Converter based on Electromagnetically Coupled Class-D LC Oscillators achieving 78.1% Efficiency in 22nm FDSOI CMOS
A fully integrated DC-DC converter based on electromagnetically coupled class-D LC oscillators achieving 0.42-3.2W/mm2 power density and 69.4-78.1% efficiency is demonstrated in a 22nm FDSOI CMOS technology. This work proposes on-chip 8-shaped and vertically stacked transformers, which are orthogonally placed for the high-power density, low undesired coupling coefficient and small electromagnetic interference (EMI) radiation. In addition, the output ripple is <10mV without attaching any output capacitor thanks to the 4-phase electromagnetic power delivery scheme. The converter also offers a duty cycled operation mode that enables <2% efficiency degradation down to 100μW. The total chip area is 0.59mm2 for 5.9nH inductance (high efficiency version) and 0.22mm2 for 3.9nH (high power density versions).
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