G. Leal, Mariana Amorim Fraga, G. W. A. Cardoso, A. S. da Silva Sobrinho, M. Massi
{"title":"金属靶功率对共溅射Sn-DLC和W-DLC薄膜性能的影响","authors":"G. Leal, Mariana Amorim Fraga, G. W. A. Cardoso, A. S. da Silva Sobrinho, M. Massi","doi":"10.1109/SBMICRO.2015.7298111","DOIUrl":null,"url":null,"abstract":"There is a great interest in understanding the properties of sputtered DLC films in order to enable their wide application in electronic devices and sensors. In present study, metal-containing diamond-like carbon (Me-DLC) thin films were deposited on Si (100) substrates by DC magnetron co-sputtering using a carbon target under a fixed power (150 W) and a metal target (tin or tungsten) under varying power (10-30 W), while the other parameters were kept constant. The growth rate, chemical composition, structure and electrical resistivity of the Sn-DLC and W-DLC thin films were studied by mechanical profilometer, RBS, SEM, Raman spectroscopy and four points probe, respectively. The results showed that the growth rate of Sn-DLC thin film is higher than the W-DLC. Furthermore, the Sn incorporation in DLC films is higher than W-DLC for the same power applied to the metal target. Relationship between the electrical resistivity of both film types and the power applied was also observed.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of metal target power on the properties of co-sputtered Sn-DLC and W-DLC thin films\",\"authors\":\"G. Leal, Mariana Amorim Fraga, G. W. A. Cardoso, A. S. da Silva Sobrinho, M. Massi\",\"doi\":\"10.1109/SBMICRO.2015.7298111\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is a great interest in understanding the properties of sputtered DLC films in order to enable their wide application in electronic devices and sensors. In present study, metal-containing diamond-like carbon (Me-DLC) thin films were deposited on Si (100) substrates by DC magnetron co-sputtering using a carbon target under a fixed power (150 W) and a metal target (tin or tungsten) under varying power (10-30 W), while the other parameters were kept constant. The growth rate, chemical composition, structure and electrical resistivity of the Sn-DLC and W-DLC thin films were studied by mechanical profilometer, RBS, SEM, Raman spectroscopy and four points probe, respectively. The results showed that the growth rate of Sn-DLC thin film is higher than the W-DLC. Furthermore, the Sn incorporation in DLC films is higher than W-DLC for the same power applied to the metal target. Relationship between the electrical resistivity of both film types and the power applied was also observed.\",\"PeriodicalId\":342493,\"journal\":{\"name\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2015.7298111\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of metal target power on the properties of co-sputtered Sn-DLC and W-DLC thin films
There is a great interest in understanding the properties of sputtered DLC films in order to enable their wide application in electronic devices and sensors. In present study, metal-containing diamond-like carbon (Me-DLC) thin films were deposited on Si (100) substrates by DC magnetron co-sputtering using a carbon target under a fixed power (150 W) and a metal target (tin or tungsten) under varying power (10-30 W), while the other parameters were kept constant. The growth rate, chemical composition, structure and electrical resistivity of the Sn-DLC and W-DLC thin films were studied by mechanical profilometer, RBS, SEM, Raman spectroscopy and four points probe, respectively. The results showed that the growth rate of Sn-DLC thin film is higher than the W-DLC. Furthermore, the Sn incorporation in DLC films is higher than W-DLC for the same power applied to the metal target. Relationship between the electrical resistivity of both film types and the power applied was also observed.
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