基于RF MEMS技术和分布式衰减网络的DC-20GHz衰减器设计

2016 8th IEEE International Conference on Communication Software and Networks (ICCSN) Pub Date : 2016-06-04 DOI:10.1109/ICCSN.2016.7586681

Qi Zhong, Xin Guo, Zewen Liu

{"title":"基于RF MEMS技术和分布式衰减网络的DC-20GHz衰减器设计","authors":"Qi Zhong, Xin Guo, Zewen Liu","doi":"10.1109/ICCSN.2016.7586681","DOIUrl":null,"url":null,"abstract":"In this paper we presented a design of 4 bit attenuator with RF MEMS switches and distributed attenuation networks. The substrate of this attenuator is high resistance silicon and the TaN thin film is used as resistors. RF MEMS switches have excellent microwave properties to reduce the insertion loss of attenuator and increase the insulation. Distributed attenuation networks employed as fixed attenuators have the advantages of smaller size and better performance in comparison to conventional π or T-type fixed attenuators. Over DC-20GHz, the simulation results show the attenuation flatness of 1.52-1.65dB and the attenuation range of 15.35-17.02dB. The minimum attenuation is 0.44-1.96dB in the interesting frequency range. The size of the attenuator is 2152 × 7500μm2.","PeriodicalId":158877,"journal":{"name":"2016 8th IEEE International Conference on Communication Software and Networks (ICCSN)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A DC-20GHz attenuator design with RF MEMS technologies and distributed attenuation networks\",\"authors\":\"Qi Zhong, Xin Guo, Zewen Liu\",\"doi\":\"10.1109/ICCSN.2016.7586681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we presented a design of 4 bit attenuator with RF MEMS switches and distributed attenuation networks. The substrate of this attenuator is high resistance silicon and the TaN thin film is used as resistors. RF MEMS switches have excellent microwave properties to reduce the insertion loss of attenuator and increase the insulation. Distributed attenuation networks employed as fixed attenuators have the advantages of smaller size and better performance in comparison to conventional π or T-type fixed attenuators. Over DC-20GHz, the simulation results show the attenuation flatness of 1.52-1.65dB and the attenuation range of 15.35-17.02dB. The minimum attenuation is 0.44-1.96dB in the interesting frequency range. The size of the attenuator is 2152 × 7500μm2.\",\"PeriodicalId\":158877,\"journal\":{\"name\":\"2016 8th IEEE International Conference on Communication Software and Networks (ICCSN)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 8th IEEE International Conference on Communication Software and Networks (ICCSN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCSN.2016.7586681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 8th IEEE International Conference on Communication Software and Networks (ICCSN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCSN.2016.7586681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文设计了一种采用射频MEMS开关和分布式衰减网络的4位衰减器。该衰减器的衬底为高阻硅，采用TaN薄膜作为电阻。射频MEMS开关具有优良的微波特性，可以减少衰减器的插入损耗，提高绝缘性。采用分布式衰减网络作为固定衰减器，与传统的π型或t型固定衰减器相比，具有体积更小、性能更好的优点。在DC-20GHz频段，仿真结果显示衰减平坦度为1.52 ~ 1.65 db，衰减范围为15.35 ~ 17.02 db。在感兴趣的频率范围内，最小衰减为0.44-1.96dB。衰减器的尺寸为2152 × 7500μm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A DC-20GHz attenuator design with RF MEMS technologies and distributed attenuation networks

In this paper we presented a design of 4 bit attenuator with RF MEMS switches and distributed attenuation networks. The substrate of this attenuator is high resistance silicon and the TaN thin film is used as resistors. RF MEMS switches have excellent microwave properties to reduce the insertion loss of attenuator and increase the insulation. Distributed attenuation networks employed as fixed attenuators have the advantages of smaller size and better performance in comparison to conventional π or T-type fixed attenuators. Over DC-20GHz, the simulation results show the attenuation flatness of 1.52-1.65dB and the attenuation range of 15.35-17.02dB. The minimum attenuation is 0.44-1.96dB in the interesting frequency range. The size of the attenuator is 2152 × 7500μm2.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 8th IEEE International Conference on Communication Software and Networks (ICCSN)

自引率

0.00%

发文量