可重构的前端架构和A/D转换器,用于4G无线电的灵活无线收发器

G. Gielen, E. Goris
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引用次数: 43

摘要

灵活性是4G电信系统的一个关键特征,它需要可重构的收发器,可以应对多种标准(蜂窝、WLAN、蓝牙等)。此外,这些收发器应该适应环境(是否存在接收阻塞,电池电量状态等),以根据客户需求和期望的服务质量最小化功耗并优化性能。此外,为了在4G系统中实施新的未来标准,需要灵活性来缩短开发时间和成本。所有这些都需要一个数字控制的前端架构(“软件定义无线电”),通过数字可编程软件控制可重构RF和模拟基带块。这对这种可重构且节能的RF/模拟模块的设计提出了严峻的挑战。对于接收机中的模数转换器,这归结为设计具有可变带宽和动态范围的功率和面积效率高的可重构转换器。描述了在4G系统中对这种转换器的一般要求。然后用可重构的连续时间/spl Delta//spl Sigma/ a/ D转换器的设计来说明这一点,该转换器具有流水线式多位量化器和1位反馈。该芯片以0.18 /spl μ m的CMOS工艺实现。它有3种不同的模式(20 MHz BW/58 dB SNDR, 4 MHz BW/60 dB SNDR, 0.2 MHz BW/70 dB SNDR)。该芯片的有效面积为0.9 mm/sup 2/,最苛刻模式(20 MHz/58 dB)的功耗为37 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reconfigurable front-end architectures and A/D converters for flexible wireless transceivers for 4G radios
Flexibility is a key feature in 4G telecom systems, where there is a demand for reconfigurable transceivers that can cope with multiple standards (cellular, WLAN, Bluetooth, etc.). Additionally, these transceivers should adapt to the environment (presence of received blockers or not, status of battery power levels, etc.) to minimize power consumption and optimize performance according to the needs of the customer and the desired quality of service. In addition, flexibility is required to cut the development time and cost to implement a new future standard into the 4G system. All this calls for a digitally controlled front-end architecture ("software-defined radio") with reconfigurable RF and analog baseband blocks controlled through digital programmable software. This poses serious challenges to the design of such reconfigurable yet power-efficient RF/analog blocks. For the analog-to-digital converters in the receiver, this comes down to designing a power- and area-efficient reconfigurable converter with variable bandwidth and dynamic range. The general requirements for such converters in 4G systems is described. This is then illustrated with the design of a reconfigurable continuous-time /spl Delta//spl Sigma/A/D converter with a pipelined multi-bit quantizer and 1-bit feedback. The chip has been realized in a 0.18 /spl mu/m CMOS technology. It has 3 different modes (20 MHz BW/58 dB SNDR, 4 MHz BW/60 dB SNDR, 0.2 MHz BW/70 dB SNDR). The chip has an active area of 0.9 mm/sup 2/ and the power consumption for the most demanding mode (20 MHz/58 dB) is 37 mW.
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