BGaN back barrier engineering on E-mode T-gate double heterostructure HEMT for high RF applications

This research focuses on improving the draincurrent and radio-frequency properties of a T-gate E-mode AlInN/GaN HEMT with a BGaN back barrier. The results indicate that the boron gallium nitride back barrier may restrict the two-dimensional electron gas (2DEG) in the channel region and efficiently suppress the short channel effects. The BGaN back barrier HEMT with just a 2% B-component greatly improves the device’s analog and RF performance over a normal GaN buffer HEMT such as transconductance (0.15 S), intrinsic gain, early voltage (4.24 V), cut-off frequency (141 GHz) GFP (356 GHz), GTFP (4.6 THz), and transconductance frequency product (6.5 THz). Therefore, the device with a BGaN back barrier has considerable potential for use in applications requiring extremely linear devices that operate at high frequencies and high gain powers.