基于180nm CMOS技术的低功耗14GHz LC-VCO

M. Chung, Pin-Rui Huang, Y. Kuo
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引用次数: 0

摘要

提出了一种基于结构简单的ku波段LC-tank设计的压控振荡器(VCO),以实现低功耗、宽调谐范围(TR)和采用台积电180 nm CMOS制造工艺制造的最少元件数量。当电压为0.9 V时,该磁芯的功耗为3.75 mW。带片上探测片的整个芯片的面积仅为0.46 × 0.63 mm2。该VCO在13.36 ~ 15.72 GHz范围内实现了16.23%的TR,最高输出功率为11.31 dBm。在13.4 GHz载波的偏移频率为1和10 MHz时,相位噪声分别为100.3和- 124 dBc/Hz。所提出的ku波段VCO具有177.1 dBc/Hz的优值(FoM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-Power 14GHz LC-VCO in 180nm CMOS Technology
A voltage-controlled oscillator (VCO) with A Ku-band LC-tank design based on a simple structure is proposed to achieve low power consumption, wide tuning range (TR), and a minimum number of components manufactured with TSMC’s 180 nm CMOS manufacturing process. The power consumption of this core is 3.75 mW when the voltage supply is 0.9 V. The are of the whole chip with on-wafer probing pads is only 0.46 × 0.63 mm2. The proposed VCO achieves 16.23 % TR from 13.36 to 15.72 GHz, and the highst output power is 11.31 dBm. The phase noise is measured as 100.3 and −124 dBc/Hz at an offset frequency of 1 and 10 MHz from a carrier of 13.4 GHz. The proposed Ku-Band VCO exhibited a figure of merit (FoM) value of 177.1 dBc/Hz.
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