未来混合模拟数字应用中高电阻率衬底的改进

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015432

T. Ohguro, K. Kojima, H. Momose, S. Nitta, T. Fukuda, T. Enda, Y. Toyoshima

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引用次数: 25

摘要

全氧沉淀(FOP)晶圆可以抑制STI过程中的滑移产生，并保持较高的衬底电阻率。额外的硼注入可以抑制相邻井间由于Xj较浅而产生的泄漏电流。该植入对MOSFET的特性没有影响。高阻衬底(HRS)可以提供良好的ESD性能，抑制高频信号通过电阻器中的衬底。因此，带FOP和附加植入的HRS对于未来的混合信号CMOS和RF电路是有效的。

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Improvement of high resistivity substrate for future mixed analog-digital applications

Fully oxygen precipitated (FOP) wafers can suppress slip generation during the STI process and maintain high substrate resistivity. Additional boron implantation can suppress the leakage current between the adjacent wells due to shallow Xj. No effect on MOSFET characteristics by this implantation was observed. The high resistivity substrate (HRS) can provide good ESD performance and suppress the passage of high frequency signals through the substrate in resistors. Thus, HRS with FOP & additional implantation is effective for future mixed signal CMOS with RF circuits.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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