180nm CMOS技术下RFID标签的ask调制器设计

2018 International Conference on Intelligent Systems and Computer Vision (ISCV) Pub Date : 2018-04-02 DOI:10.1109/ISACV.2018.8354011

Abdelali El Boutahiri, Karim El khadiri, H. Qjidaa, A. Aarab, R. El Alami, L. Zenkouar

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引用次数: 3

摘要

本文介绍了一种用于射频识别(RFID)标签的180nm CMOS技术移幅键控(ASK)调制器的仿真结果。它可以工作在低电压VDD=1V。该调制器基于电压倍增器。所提出的电路可以使两个信号相乘，一个载波信号(高频正弦信号)和一个调制信号(低频信号)，我们选择一个具有二进制数据序列的平方信号进行传输，输出电压呈现载波的幅值变化，称为调制信号。我们设计了两个电路来实现相同的功能，并且可以用于RFID标签。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ASK-modulator design of RFID tag in 180nm CMOS technology

This paper presents the simulation results of an Amplitude-shift keying (ASK) modulator in 180nm CMOS technology for an radio frequency identification (RFID) tag. It can operates even at low voltage VDD=1V. This modulator based on the voltage multiplier. The proposed circuit can made the multiplication of two signals, a carrier signal (high frequency sinusoidal signal) and a modulating signal (low frequency signal), we chose a square signal that has a binary sequence of data to transmit, the output voltage presents a variation of amplitude of the carrier and is called the modulated signal. We designed two circuits do the same function and can be used for RFID tags.

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2018 International Conference on Intelligent Systems and Computer Vision (ISCV)

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