143MHz 1.1W 4.5Mb动态TCAM分层搜索和移位冗余结构

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) Pub Date : 2004-09-13 DOI:10.1109/ISSCC.2004.1332667

H. Noda, K. Inoue, M. Kuroiwa, A. Amo, A. Hachisuka, H. Mattausch, T. Koide, S. Soeda, K. Dosaka, K. Arinnoto

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引用次数: 23

摘要

采用0.13 /spl mu/m嵌入式DRAM技术设计了4.5 Mb动态三元CAM (DTCAM)。功耗为1.1 W，在32mm /sup /的小硅面积上实现了143m搜索/秒的性能。通过采用流水线分层搜索和行/列移位冗余，估计产量提高了3.6倍。

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A 143MHz 1.1W 4.5Mb dynamic TCAM with hierarchical searching and shift redundancy architecture

A 4.5 Mb dynamic ternary CAM (DTCAM) is designed in 0.13 /spl mu/m embedded DRAM technology. A performance of 143 M searches/sec is achieved at a power dissipation of 1.1 W and on a small silicon area of 32 mm/sup 2/. A 3.6-times yield improvement is estimated by employing pipelined hierarchical searching and row/column-shift redundancy.

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来源期刊

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)

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