InP基InGaAsBi光电探测器的深能级表征

2019 IEEE Photonics Conference (IPC) Pub Date : 2019-09-01 DOI:10.1109/IPCon.2019.8908506

Jian Huang, Baile Chen, Zhuo Deng, Y. Gu, Yingjie Ma, Jian Zhang, Xiren Chen, J. Shao

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引用次数: 0

摘要

本文采用低频噪声光谱和变温光致发光技术表征了InGaAsBi光电探测器的缺陷水平。这两种独立的技术都发现了一些深层次的问题，其中一些是一致的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of Deep Levels in InP Based InGaAsBi Photodetector

In this work, low frequency noise spectroscopy and temperature varied photoluminescence was used to characterize the defect levels in InGaAsBi photodetector. Both of these independent techniques have found some deep levels, and some of which are the consistent.

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2019 IEEE Photonics Conference (IPC)

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