场发射过程中单壁碳纳米管的结构变形

S.H. Lee, J. Lee, W. Kim, T. Jeong, J. Heo, J. Park, J.M. Kim, S. Cho, T. Yoon, M. Yoo, J. Moon, J. Nam, H. Lee, J.H. Park, J. Ha, D. Choe
{"title":"场发射过程中单壁碳纳米管的结构变形","authors":"S.H. Lee, J. Lee, W. Kim, T. Jeong, J. Heo, J. Park, J.M. Kim, S. Cho, T. Yoon, M. Yoo, J. Moon, J. Nam, H. Lee, J.H. Park, J. Ha, D. Choe","doi":"10.1109/IVNC.2004.1354897","DOIUrl":null,"url":null,"abstract":"Stable electron emission from CNT emitters at required current densities is necessary to apply to the commercial devices. Generally, the current degradation during field emission has been understood as evaporation of emitter or breaking apart of tip end under intensive electrical field. In this report, we suggest one more possible mechanism that the emission current degradation may occur by increased resistance of emitters through structural deformation under field emission. The effect of current density and time on the structure of SWNT emitters was studied with TEM, low current density (100 /spl mu/A/cm/sup 2/ for 1 h) application gave no detectable structural deformation with comparison to pristine SWNTs. However, the bundles of SWNTs were deformed to amorphous structure starting at tip ends or defect sites when a high current density (500 /spl mu/m/cm/sup 2/ for more than 1h) was applied. It supports that the deformation of SWNT results from heat during emission at emitters. It is understood that the heat during emission could give a rise to destruct the crystalline structure and reconstruct the carbon bonding in SWNTs bundles. We also understood that the increase of the turn-on voltage is attributed to the increase of electrical resistance of emitters raising from structural deformation during emission process.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural deformation of single-wall carbon nanotubes during field emission process\",\"authors\":\"S.H. Lee, J. Lee, W. Kim, T. Jeong, J. Heo, J. Park, J.M. Kim, S. Cho, T. Yoon, M. Yoo, J. Moon, J. Nam, H. Lee, J.H. Park, J. Ha, D. Choe\",\"doi\":\"10.1109/IVNC.2004.1354897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stable electron emission from CNT emitters at required current densities is necessary to apply to the commercial devices. Generally, the current degradation during field emission has been understood as evaporation of emitter or breaking apart of tip end under intensive electrical field. In this report, we suggest one more possible mechanism that the emission current degradation may occur by increased resistance of emitters through structural deformation under field emission. The effect of current density and time on the structure of SWNT emitters was studied with TEM, low current density (100 /spl mu/A/cm/sup 2/ for 1 h) application gave no detectable structural deformation with comparison to pristine SWNTs. However, the bundles of SWNTs were deformed to amorphous structure starting at tip ends or defect sites when a high current density (500 /spl mu/m/cm/sup 2/ for more than 1h) was applied. It supports that the deformation of SWNT results from heat during emission at emitters. It is understood that the heat during emission could give a rise to destruct the crystalline structure and reconstruct the carbon bonding in SWNTs bundles. We also understood that the increase of the turn-on voltage is attributed to the increase of electrical resistance of emitters raising from structural deformation during emission process.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2004.1354897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在要求的电流密度下,碳纳米管发射器的稳定电子发射是应用于商业设备所必需的。一般将场发射过程中的电流退化理解为强电场作用下发射极的蒸发或尖端的断裂。在本报告中,我们提出了另一种可能的机制,即在场发射作用下,结构变形导致发射体电阻增加,从而导致发射电流退化。通过透射电镜研究了电流密度和时间对SWNT发射体结构的影响,与原始SWNT相比,低电流密度(100 /spl mu/A/cm/sup 2/ 1 h)的应用没有检测到结构变形。然而,当施加高电流密度(500 /spl mu/m/cm/sup 2/)超过1h时,单壁碳纳米管束从尖端或缺陷部位开始变形为非晶结构。这支持了单壁碳纳米管的变形是由于发射过程中的热量造成的。发射过程中的热量可以破坏纳米碳管的晶体结构,重建纳米碳管束中的碳键。我们还了解到,导通电压的增加是由于发射过程中结构变形引起的发射体电阻的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural deformation of single-wall carbon nanotubes during field emission process
Stable electron emission from CNT emitters at required current densities is necessary to apply to the commercial devices. Generally, the current degradation during field emission has been understood as evaporation of emitter or breaking apart of tip end under intensive electrical field. In this report, we suggest one more possible mechanism that the emission current degradation may occur by increased resistance of emitters through structural deformation under field emission. The effect of current density and time on the structure of SWNT emitters was studied with TEM, low current density (100 /spl mu/A/cm/sup 2/ for 1 h) application gave no detectable structural deformation with comparison to pristine SWNTs. However, the bundles of SWNTs were deformed to amorphous structure starting at tip ends or defect sites when a high current density (500 /spl mu/m/cm/sup 2/ for more than 1h) was applied. It supports that the deformation of SWNT results from heat during emission at emitters. It is understood that the heat during emission could give a rise to destruct the crystalline structure and reconstruct the carbon bonding in SWNTs bundles. We also understood that the increase of the turn-on voltage is attributed to the increase of electrical resistance of emitters raising from structural deformation during emission process.
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