{"title":"高速GaAs和GaInAs高辐射发光二极管","authors":"A. Carter, R. Goodfellow, R. Davis","doi":"10.1109/IEDM.1977.189325","DOIUrl":null,"url":null,"abstract":"High radiance high speed homojunction GaAs and GaInAs VPE LEDs are shown to have frequency responses composed of two parts, a slow response, with cut off at ∼ 100 MHz and a fast response with cut off > 1.5 GHz. These responses are shown to arise from hole recombination in the n-side and electron recombination in the p-side of the junction respectively. The devices are of a sufficiently high radiance that about 80µW can be launched C.W. into a 0.16NA, 85µm core step index fibre at 500MHz, using microlens coupling.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"212 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High speed GaAs and GaInAs high radiance light emitting diodes\",\"authors\":\"A. Carter, R. Goodfellow, R. Davis\",\"doi\":\"10.1109/IEDM.1977.189325\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High radiance high speed homojunction GaAs and GaInAs VPE LEDs are shown to have frequency responses composed of two parts, a slow response, with cut off at ∼ 100 MHz and a fast response with cut off > 1.5 GHz. These responses are shown to arise from hole recombination in the n-side and electron recombination in the p-side of the junction respectively. The devices are of a sufficiently high radiance that about 80µW can be launched C.W. into a 0.16NA, 85µm core step index fibre at 500MHz, using microlens coupling.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"212 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189325\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High speed GaAs and GaInAs high radiance light emitting diodes
High radiance high speed homojunction GaAs and GaInAs VPE LEDs are shown to have frequency responses composed of two parts, a slow response, with cut off at ∼ 100 MHz and a fast response with cut off > 1.5 GHz. These responses are shown to arise from hole recombination in the n-side and electron recombination in the p-side of the junction respectively. The devices are of a sufficiently high radiance that about 80µW can be launched C.W. into a 0.16NA, 85µm core step index fibre at 500MHz, using microlens coupling.
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