J. Teyssier, D. Barataud, C. Charbonniaud, F. de Groote, J. Verspecht, J. Nebus, R. Quéré
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A transistor measurement setup for microwave high power amplifiers design
This paper presents our view of a powerful and versatile measurement setup dedicated to nonlinear characterization and modeling of high power transistor. Our bench with on-wafer capabilities captures time domain waveforms under passive load-pull and source-pull conditions. Moreover, harmonic load-pull and pulsed mode of I(V) and/or RF operation are available. Due to the combination of several innovative features, high power measurements up to 18 GHz and 50 Watts with a gamma load factor up to 0.85 at the probe tips are made possible.
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