氧中电子雪崩的粒子法数值模拟

IEEE 1997 Annual Report Conference on Electrical Insulation and Dielectric Phenomena Pub Date : 1997-10-19 DOI:10.1109/CEIDP.1997.641151

C. Soria, F. Pontiga, A. Castellanos

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引用次数: 2

摘要

用粒子法模拟了电子雪崩的发展过程。雪崩是由阴极附近引入的一些种子电子引起的。电离、附着、复合和阴极二次电子发射的影响都包括在内。计算了前15ns的电子和离子密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical modeling of an electron avalanche in oxygen by a particle method

The development of an electron avalanche is simulated by means of a particle method. The avalanche is initiated from a number of seed electrons that are introduced in the vicinity of the cathode. The effects of ionization, attachment, recombination and secondary-electron emission from the cathode are all included. Electron and ion densities have been computed for the first 15 ns.

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来源期刊

IEEE 1997 Annual Report Conference on Electrical Insulation and Dielectric Phenomena

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