{"title":"200 GHz芯片对芯片无线电力传输","authors":"P. V. Testa, V. Riess, C. Carta, F. Ellinger","doi":"10.1109/RWS.2018.8304962","DOIUrl":null,"url":null,"abstract":"This paper presents a wireless approach to transfer power between physically-separated semiconductor dies, suitable for millimeter-waves over the ultra-wide frequency band 140 GHz–220 GHz. The technique relies on the near-field coupling between loop antennas. The antennas are realized with conventional aluminum bond wires of 17 μm in diameter. The loop planes are orthogonal to the chip surface and welded on ad-hoc pads. An integrated transmission line is used to close the loop, with one side of the loop attached to the source or load impedance, and the other connected to ground. This technique demonstrated a minimum insertion-loss of 4.5 dB over a frequency band of operation spanning from 178 GHz to 204 GHz.","PeriodicalId":170594,"journal":{"name":"2018 IEEE Radio and Wireless Symposium (RWS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"200 GHz chip-to-chip wireless power transfer\",\"authors\":\"P. V. Testa, V. Riess, C. Carta, F. Ellinger\",\"doi\":\"10.1109/RWS.2018.8304962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a wireless approach to transfer power between physically-separated semiconductor dies, suitable for millimeter-waves over the ultra-wide frequency band 140 GHz–220 GHz. The technique relies on the near-field coupling between loop antennas. The antennas are realized with conventional aluminum bond wires of 17 μm in diameter. The loop planes are orthogonal to the chip surface and welded on ad-hoc pads. An integrated transmission line is used to close the loop, with one side of the loop attached to the source or load impedance, and the other connected to ground. This technique demonstrated a minimum insertion-loss of 4.5 dB over a frequency band of operation spanning from 178 GHz to 204 GHz.\",\"PeriodicalId\":170594,\"journal\":{\"name\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2018.8304962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2018.8304962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a wireless approach to transfer power between physically-separated semiconductor dies, suitable for millimeter-waves over the ultra-wide frequency band 140 GHz–220 GHz. The technique relies on the near-field coupling between loop antennas. The antennas are realized with conventional aluminum bond wires of 17 μm in diameter. The loop planes are orthogonal to the chip surface and welded on ad-hoc pads. An integrated transmission line is used to close the loop, with one side of the loop attached to the source or load impedance, and the other connected to ground. This technique demonstrated a minimum insertion-loss of 4.5 dB over a frequency band of operation spanning from 178 GHz to 204 GHz.