25.3 A 1.3A GaN栅极驱动器，具有全集成栅极电荷缓冲电容器，可提供11nC，实现高压储能

2017 IEEE International Solid-State Circuits Conference (ISSCC) Pub Date : 2017-02-01 DOI:10.1109/ISSCC.2017.7870446

A. Seidel, B. Wicht

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引用次数: 8

摘要

越来越多的电力电子应用使用GaN晶体管，因为与传统的Si器件相比，它们可以实现更高的开关频率。更快的开关缩小了无源器件的尺寸，使可再生能源、电动汽车和家用电器等应用的解决方案更加紧凑。GaN晶体管的栅极电荷QG比Si晶体管小10倍，栅极驱动电压通常为5V，而Si晶体管的栅极驱动电压为15V。

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25.3 A 1.3A gate driver for GaN with fully integrated gate charge buffer capacitor delivering 11nC enabled by high-voltage energy storing

More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ∼10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ∼15V for Si.

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2017 IEEE International Solid-State Circuits Conference (ISSCC)

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