TLPG、晶片级和封装级测试所得ESD HBM(人体模型)的比较与相关性

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/EOSESD.2000.890033

M. Lee, C.H. Liu, Chung-Chiang Lin, Jin-Tau Chou, H. Tang, Y.J. Chang, K. Fu

{"title":"TLPG、晶片级和封装级测试所得ESD HBM(人体模型)的比较与相关性","authors":"M. Lee, C.H. Liu, Chung-Chiang Lin, Jin-Tau Chou, H. Tang, Y.J. Chang, K. Fu","doi":"10.1109/EOSESD.2000.890033","DOIUrl":null,"url":null,"abstract":"In this work, we have found that the TLPG (transmission line pulse generator) can be well correlated to the HBM by adding a parasitic series resistance obtained simply from the least squares error solution method or numerically from a simplified LEM (lumped element model) method. Also, experimental evidence suggests that the HBM is best described by the log normal distribution rather than the normal distribution.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Comparison and correlation of ESD HBM (human body model) obtained between TLPG, wafer-level, and package-level tests\",\"authors\":\"M. Lee, C.H. Liu, Chung-Chiang Lin, Jin-Tau Chou, H. Tang, Y.J. Chang, K. Fu\",\"doi\":\"10.1109/EOSESD.2000.890033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we have found that the TLPG (transmission line pulse generator) can be well correlated to the HBM by adding a parasitic series resistance obtained simply from the least squares error solution method or numerically from a simplified LEM (lumped element model) method. Also, experimental evidence suggests that the HBM is best described by the log normal distribution rather than the normal distribution.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

在这项工作中，我们发现，通过添加寄生串联电阻，TLPG(传输线脉冲发生器)可以很好地与HBM相关，这些电阻是简单地从最小二乘误差解方法或从简化的LEM(集中单元模型)方法中获得的。此外，实验证据表明，HBM最适合用对数正态分布来描述，而不是正态分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Comparison and correlation of ESD HBM (human body model) obtained between TLPG, wafer-level, and package-level tests

In this work, we have found that the TLPG (transmission line pulse generator) can be well correlated to the HBM by adding a parasitic series resistance obtained simply from the least squares error solution method or numerically from a simplified LEM (lumped element model) method. Also, experimental evidence suggests that the HBM is best described by the log normal distribution rather than the normal distribution.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

自引率

0.00%

发文量