利用半导体硅二极管进行伽马射线和中子剂量测定

A. Eid, M. Gomaa
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引用次数: 2

摘要

用瑞典5422型硅二极管研究了在10 ~ 750kgy的伽马射线吸收剂量和10mgy ~ 700gy的中子吸收剂量下的辐射响应。结果表明,该材料对γ射线的灵敏度为17.6 mV/ kGY ~ 60 kGY;对70 ~ 700 kGY的灵敏度为10 ~ 17 mV/ kGY,误差为±7%;对快裂变中子的响应为G7 mV/Gy。研究了影响剂量计读数的因素,如高温下剂量计读数、剂量计退火和可重复使用等。该系统可用于高水平伽玛射线源、反应堆导管混凝土屏蔽层周围的伽玛射线和中子剂量测定,也可用于反应堆堆芯剂量测定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gamma-Ray and Neutron Dosimetry Using Semiconductor Silicon Diodes
Radiation response to gamma-ray absorbed dose in the range of 10 to 750 kGy and neutron absorbed dose in the range of 10 mGy to 700 Gy were investigated using Swedish manufactured silicon diode, type 5422. The results indicated that its sensitivity to gamma-rays is 17.6 m V/kGY up to 60 kGy, and its sensitivity reduces to 10-17 mV/kGy from 70 kGy up to 700 kGy within an error of ±7%, while its response to fast fission neutrons is G7 mV/Gy. Factors affecting dosimeter reading such as dosimeter reading at high temperature, dosimeter annealing and reusability are also studied. The system teas used for gamma-ray and neutron dosimetry around high level gamma-ray source, reactor ducted concrete shield, and it is also examined for reactor core dosimetry.
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