硅器件NIEL尺度的实验研究

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI:10.1109/RADECS45761.2018.9328677

T. Nuns, C. Inguimbert, S. Soonckindt, B. Dryer, T. Buggey, C. Poivey

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引用次数: 0

摘要

本文提出了一些新的实验数据，比较了电子、质子和γ辐照后硅器件与NIEL的损伤系数。结果表明，实测损伤因子与位移损伤效应的替代模型“有效”NIEL比经典模型更符合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimental Study of the NIEL Scaling for Silicon Devices

This paper proposes some new experimental data comparing the damage factor of silicon devices with the NIEL after electron, proton and gamma irradiations. The results show that the measured damage factors fit better with the “effective” NIEL, an alternative model of displacement damage effects, than with the classical one.

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2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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