在PECVD接触蚀刻停止层上使用导电顶膜(CTF)避免等离子体对栅极氧化物的损伤

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015393

S. Song, S. Filipiak, A. Perera, M. Turner, F. Huang, S. Anderson, L. Kang, B. Min, D. Menke, S. Tukunang, S. Venkatesan

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引用次数: 9

摘要

通过首次在接触蚀刻停止层(ESL)上加入导电薄顶膜(CTF)，可以有效地阻挡后续高密度等离子体工艺产生的辐射，从而显著降低等离子体损伤。我们还发现等离子体损伤加剧了pmosfet的负偏置温度不稳定性(NBTI)，并且可以通过CTF工艺有效地抑制。

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Avoiding plasma induced damage to gate oxide with conductive top film (CTF) on PECVD contact etch stop layer

Significantly reduced plasma damage is demonstrated by including a thin conductive top film (CTF) on the contact etch stop layer (ESL) for the first time, which effectively blocks radiation generated by subsequent high density plasma processes. We also show that plasma damage exacerbates negative bias temperature instability (NBTI) in PMOSFETs and can be effectively suppressed by the CTF process.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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