微掺杂隧道结量子阱激光二极管

2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN) Pub Date : 2018-02-01 DOI:10.1109/WOCN.2018.8556128

Huolei Wang, Yajie Li, Hongyan Yu, Xuliang Zhou, Wei-xi Chen, Jiao-qing Pan, Ying Ding

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引用次数: 0

摘要

实验研究了传统量子阱激光二极管的电学和光学特性，以及微掺杂隧道结N++GaAs/未掺杂GaAs的量子阱激光二极管。结果表明，在InGaAs/GaAs量子阱材料体系中，微掺杂的隧道结对激光二极管的性能有重要影响。TJ二极管的内量子效率为21%，损耗为6.9 em−1，电流阈值为35 mA，两种激光器工作在1.06 μm，但少量掺杂的隧道结二极管表现出非线性s型电流-电压和宽带激光特性。研究结果也可能导致更多应用的实现。

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Quantum Well Laser Diodes with slightly-doped tunnel junction

We experimentally investigate the electrical and optical characteristics of conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction N++GaAs/undoped-GaAs. The results show that the slightly-doped tunnel junction give significant role on the laser diodes performances in the InGaAs/GaAs quantum well material system. The TJ LD has a internal quantum efficiency of 21% and the loss is 6.9 em−1, the current threshold is 35 mA, both the lasers are operating at 1.06 μm, but the slightly-doped tunnel junction diode show nonlinear S-shaped current-voltage and broadband lasing characteristics. The results may also lead to the realization of more applications.

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来源期刊

2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN)

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