InAlAs/ in /sub x/Ga/sub 1-x/As伪晶hemt导通模式下的击穿机制

J. Dickmann, S. Schildberg, A. Geyer, B. Maile, A. Schurr, S. Heuthe, P. Narozny
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引用次数: 3

摘要

伪晶InAlAs/ in /sub x/Ga/sub 1-x/As(0.53>)导通模式击穿机理的系统研究
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Breakdown mechanisms in the on-state mode of operation of InAlAs/In/sub x/Ga/sub 1-x/As pseudomorphic HEMTs
A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53>
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