ka波段高效率1瓦功率放大器

1992 IEEE Microwave Symposium Digest MTT-S Pub Date : 1992-06-01 DOI:10.1109/MWSYM.1992.188048

G. Dow, K. Tan, N. Ton, J. Abell, M. Siddiqui, B. Gorospe, D. Streit, P. Liu, M. Sholley

{"title":"ka波段高效率1瓦功率放大器","authors":"G. Dow, K. Tan, N. Ton, J. Abell, M. Siddiqui, B. Gorospe, D. Streit, P. Liu, M. Sholley","doi":"10.1109/MWSYM.1992.188048","DOIUrl":null,"url":null,"abstract":"The authors describe the design and performance of a miniaturized 35-GHz power amplifier. The two-stage amplifier has achieved an output power of 1 W with an associated gain of 10 dB and a power-added efficiency of 25.1%. The design is based on a TRW 0.25- mu m T-gate pseudomorphic InGaAs high electron mobility transistor (HEMT) device technology. The amplifier was designed using a 1-mm device driving a 2-mm device. The complete amplifier mounted on a carrier is 0.26 in*0.16 in*0.02 in. The amplifier results reported here represent the best power gain and efficiency performances achieved from a single amplifier at 35 GHz.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Ka-band high efficiency 1 watt power amplifier\",\"authors\":\"G. Dow, K. Tan, N. Ton, J. Abell, M. Siddiqui, B. Gorospe, D. Streit, P. Liu, M. Sholley\",\"doi\":\"10.1109/MWSYM.1992.188048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe the design and performance of a miniaturized 35-GHz power amplifier. The two-stage amplifier has achieved an output power of 1 W with an associated gain of 10 dB and a power-added efficiency of 25.1%. The design is based on a TRW 0.25- mu m T-gate pseudomorphic InGaAs high electron mobility transistor (HEMT) device technology. The amplifier was designed using a 1-mm device driving a 2-mm device. The complete amplifier mounted on a carrier is 0.26 in*0.16 in*0.02 in. The amplifier results reported here represent the best power gain and efficiency performances achieved from a single amplifier at 35 GHz.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"209 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

介绍了一种小型化35ghz功率放大器的设计和性能。两级放大器的输出功率为1 W，相关增益为10 dB，功率增加效率为25.1%。该设计基于TRW 0.25 μ m t栅假晶InGaAs高电子迁移率晶体管(HEMT)器件技术。放大器的设计采用1毫米器件驱动2毫米器件。安装在载波上的完整放大器是0.26英寸*0.16英寸*0.02英寸。这里报告的放大器结果代表了35ghz频段单个放大器的最佳功率增益和效率性能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Ka-band high efficiency 1 watt power amplifier

The authors describe the design and performance of a miniaturized 35-GHz power amplifier. The two-stage amplifier has achieved an output power of 1 W with an associated gain of 10 dB and a power-added efficiency of 25.1%. The design is based on a TRW 0.25- mu m T-gate pseudomorphic InGaAs high electron mobility transistor (HEMT) device technology. The amplifier was designed using a 1-mm device driving a 2-mm device. The complete amplifier mounted on a carrier is 0.26 in*0.16 in*0.02 in. The amplifier results reported here represent the best power gain and efficiency performances achieved from a single amplifier at 35 GHz.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1992 IEEE Microwave Symposium Digest MTT-S

自引率

0.00%

发文量