微波Ga-As集成电路的准单片方法

1983 13th European Microwave Conference Pub Date : 1983-09-01 DOI:10.1109/EUMA.1983.333253

E. Bastida, G. Donzelli, G. Ghione, C. Naldi

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引用次数: 7

摘要

提出了一种新型的微波集成电路，它比混合电路和全单片电路都有明显的优势。然后报告了将倒装FET器件的S参数与全单片器件的S参数相关联的理论分析，这允许开发一种简单且非常有效的单片集成电路测试技术。最后介绍了新型电路和测试技术的实例。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Quasi-Monolithic Approach to Microwave Ga-As Integrated Circuits

A new class of microwave integrated circuits is presented, having definite advantages over both the hybrid and the fully monolithic solutions. A theoretical analysis correlating the S parameters of a flip-chip mounted FET device with those of a fully monolithic device is then reported, which permits to develop a straightforward and very efficient testing technique for monolithic ICs. Practical examples of the new circuits and of the testing technique are finally described.

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1983 13th European Microwave Conference

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