射频光子学的光电二极管线性度要求和使用光电二极管阵列提高性能的演示

2008 International Topical Meeting on Microwave Photonics jointly held with the 2008 Asia-Pacific Microwave Photonics Conference Pub Date : 2008-11-05 DOI:10.1109/MWP.2008.4666641

V. Urick, A. Hastings, J. McKinney, P. Devgan, K. Williams, C. Sunderman, J. Diehl, K. Colladay

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引用次数: 26

摘要

描述了光电二极管非线性对强度调制直接探测模拟光子链路的影响。计算了用输出截距点量化的光电二极管的二阶和三阶线性要求。在1ghz的测量数据为高电流(60毫安)部分耗尽吸收光电二极管提出。一个4光电二极管26ma阵列在5mhz下实现了限制调制的三阶性能和84 dBm的二次谐波输出截距。

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Photodiode linearity requirements for radio-frequency photonics and demonstration of increased performance using photodiode arrays

The impact that photodiode nonlinearities have on intensity-modulation direct-detection analog photonic links is described. The second- and third-order linearity requirements for photodiodes, quantified in terms of output intercept points, are calculated. Measured data at 1 GHz for a high-current (60-mA) partially-depleted-absorber photodiode are presented. A four-photodiode 26-mA array at 5 MHz is demonstrated to achieve modulation-limited third-order performance and a second-harmonic output intercept point of 84 dBm.

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2008 International Topical Meeting on Microwave Photonics jointly held with the 2008 Asia-Pacific Microwave Photonics Conference

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