S. Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, P. Fan, Chia-En Huang, Y. Chih, Yih Wang, Jonathan Chang
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A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing
A 16Kb one-time-programmable (OTP) antifuse memory is fabricated in a 5nm high-K, metal-gate FinFET CMOS for the first time. The bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are implemented to achieve intrinsic bit error rate (BER) below 1ppb for in-field programming in 5nm SoC and 10 years of data retention at 125°C.
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