100纳米以下超大规模集成电路技术的新前沿——器件与电路协同设计

M. Fukuma
{"title":"100纳米以下超大规模集成电路技术的新前沿——器件与电路协同设计","authors":"M. Fukuma","doi":"10.1109/VLSIT.2000.852746","DOIUrl":null,"url":null,"abstract":"Scaling has been a basic principle for continuing progress in the development of VLSIs for a long time. However, this situation is changing when the design rule is approaching to 100 nm or less, and the SOC has become important. Instead of conventional scaling, integration of digital innovations in devices and circuits is now playing an important role. This paper analyzes the background of this change and defines new frontiers for device technology of sub-100 nm VLSIs.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"266 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"New frontiers of sub-100 nm VLSI technology-moving toward device and circuit co-design\",\"authors\":\"M. Fukuma\",\"doi\":\"10.1109/VLSIT.2000.852746\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Scaling has been a basic principle for continuing progress in the development of VLSIs for a long time. However, this situation is changing when the design rule is approaching to 100 nm or less, and the SOC has become important. Instead of conventional scaling, integration of digital innovations in devices and circuits is now playing an important role. This paper analyzes the background of this change and defines new frontiers for device technology of sub-100 nm VLSIs.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"266 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852746\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852746","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

长期以来,缩放一直是超大规模集成电路持续发展的基本原则。然而,当设计规则接近100nm或更小时,这种情况正在改变,SOC变得重要起来。与传统的规模扩展不同,设备和电路中的数字创新集成现在发挥着重要作用。本文分析了这一变化的背景,并定义了100纳米以下vlsi器件技术的新领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New frontiers of sub-100 nm VLSI technology-moving toward device and circuit co-design
Scaling has been a basic principle for continuing progress in the development of VLSIs for a long time. However, this situation is changing when the design rule is approaching to 100 nm or less, and the SOC has become important. Instead of conventional scaling, integration of digital innovations in devices and circuits is now playing an important role. This paper analyzes the background of this change and defines new frontiers for device technology of sub-100 nm VLSIs.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信