圆柱环绕双栅MOSFET的小信号模型及其参数

2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15) Pub Date : 2015-12-01 DOI:10.1109/ITACT.2015.7492672

V. Srivastava

{"title":"圆柱环绕双栅MOSFET的小信号模型及其参数","authors":"V. Srivastava","doi":"10.1109/ITACT.2015.7492672","DOIUrl":null,"url":null,"abstract":"The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.","PeriodicalId":336783,"journal":{"name":"2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Small signal model of Cylindrical Surrounding Double-Gate MOSFET and its parameters\",\"authors\":\"V. Srivastava\",\"doi\":\"10.1109/ITACT.2015.7492672\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.\",\"PeriodicalId\":336783,\"journal\":{\"name\":\"2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITACT.2015.7492672\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITACT.2015.7492672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

半导体器件已扩展到纳米技术范围，并面临着限制传统平面器件应用的短通道效应和亚阈值特性。为了解决这些问题，设计了一种新的器件几何形状，即双栅MOSFET。本文将双栅模型推广到圆柱型环绕双栅MOSFET的设计中，并对该MOSFET的小信号模型进行了分析。在此模型的帮助下，讨论了各参数分量的偏置和几何相关性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Small signal model of Cylindrical Surrounding Double-Gate MOSFET and its parameters

The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.

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来源期刊

2015 International Conference on Trends in Automation, Communications and Computing Technology (I-TACT-15)

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