Design and test of SiPM structures in CMOS technology

In this paper we report our results on the influence of STI guard ring structures on the design and performances of SiPM with n+p microcells. Two types of SiPM detection structures were designed and fabricated in standard CMOS technology production line. A key-point of our study is the mathematical modelling and simulation of the structure using the well-estabilished CMOS technology simulation frameworks and models. We analyse the electric field and ionization coefficients of the designed structures at breakdown voltage. In addition, experimental characterization of the fabricated SiPM including current characteristics, CV characteristics was measured and analysed in order to identify the best structure for a correct CMOS implementation of the SiPM with STI guard rings.