T. Mochizuki, K. Honma, K. Handa, W. Akinaga, K. Ohata
{"title":"使用二维电子气体场效应管的低噪声放大器","authors":"T. Mochizuki, K. Honma, K. Handa, W. Akinaga, K. Ohata","doi":"10.1109/MWSYM.1985.1132034","DOIUrl":null,"url":null,"abstract":"Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"331 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low Noise Amplifiers Using Two Dimensional Electron Gas FETs\",\"authors\":\"T. Mochizuki, K. Honma, K. Handa, W. Akinaga, K. Ohata\",\"doi\":\"10.1109/MWSYM.1985.1132034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"331 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1132034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1132034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Noise Amplifiers Using Two Dimensional Electron Gas FETs
Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.