{"title":"采用介质隔离单片微波集成电路(DIMMIC)的通用单片射频放大器","authors":"P. Bachert, M. McCombs, P. Sanders","doi":"10.1109/BIPOL.1988.51090","DOIUrl":null,"url":null,"abstract":"A new RF integrated-circuit technology is described that overcomes the drawbacks of currently available integrated processes. This DIMMIC technology draws its advantage from its dielectric isolation, which minimizes parasitic substrate capacitance, and from its lack of increased collector resistance. Using this technology, a medium-power RF amplifier was built that reduced parts count and size significantly over its discrete counterpart without sacrificing performance.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"50 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A versatile monolithic RF amplifier using a dielectrically isolated monolithic microwave integrated circuit (DIMMIC)\",\"authors\":\"P. Bachert, M. McCombs, P. Sanders\",\"doi\":\"10.1109/BIPOL.1988.51090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new RF integrated-circuit technology is described that overcomes the drawbacks of currently available integrated processes. This DIMMIC technology draws its advantage from its dielectric isolation, which minimizes parasitic substrate capacitance, and from its lack of increased collector resistance. Using this technology, a medium-power RF amplifier was built that reduced parts count and size significantly over its discrete counterpart without sacrificing performance.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"50 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A versatile monolithic RF amplifier using a dielectrically isolated monolithic microwave integrated circuit (DIMMIC)
A new RF integrated-circuit technology is described that overcomes the drawbacks of currently available integrated processes. This DIMMIC technology draws its advantage from its dielectric isolation, which minimizes parasitic substrate capacitance, and from its lack of increased collector resistance. Using this technology, a medium-power RF amplifier was built that reduced parts count and size significantly over its discrete counterpart without sacrificing performance.<>