Hefner Igbt模型的Igbt参数提取

Proceedings of the 41st International Universities Power Engineering Conference Pub Date : 2006-09-01 DOI:10.1109/UPEC.2006.367551

R. Withanage, N. Shammas, S. Tennakoorr, C. Oates, W. Crookes

{"title":"Hefner Igbt模型的Igbt参数提取","authors":"R. Withanage, N. Shammas, S. Tennakoorr, C. Oates, W. Crookes","doi":"10.1109/UPEC.2006.367551","DOIUrl":null,"url":null,"abstract":"The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model","PeriodicalId":184186,"journal":{"name":"Proceedings of the 41st International Universities Power Engineering Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Igbt Parameter Extraction for the Hefner IGBT Model\",\"authors\":\"R. Withanage, N. Shammas, S. Tennakoorr, C. Oates, W. Crookes\",\"doi\":\"10.1109/UPEC.2006.367551\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model\",\"PeriodicalId\":184186,\"journal\":{\"name\":\"Proceedings of the 41st International Universities Power Engineering Conference\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 41st International Universities Power Engineering Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UPEC.2006.367551\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 41st International Universities Power Engineering Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UPEC.2006.367551","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 24

摘要

绝缘栅双极晶体管(IGBT)目前广泛应用于许多电力电子电路中。一个精确的IGBT模型对于模拟这些电力电子电路非常重要和有用，可以在电路和器件实现之前预测电路行为和器件行为。Hefner IGBT模型是电路仿真中非常好的IGBT分析模型之一。该模型需要IGBT参数，这些参数可以通过实验提取。为了提取Hefner模型所需的IGBT参数，需要进行两个实验设置，并且需要进行几种不同的测试。本文解释了为Hefner模型提取3.3 kV/1200 A IGBT的11个不同参数所做的工作

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Igbt Parameter Extraction for the Hefner IGBT Model

The insulated gate bipolar transistor (IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment set ups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3 kV/1200 A IGBT is explained for the Hefner model

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Proceedings of the 41st International Universities Power Engineering Conference

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