InGaN/GaN量子阱中合金波动对光发射强度的影响

Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI:10.1109/NUSOD.2014.6935331

M. Maur, D. Barettin, A. Pecchia, F. Sacconi, A. D. Carlo

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引用次数: 12

摘要

在这项工作中，我们研究了InGaN/GaN量子阱(QWs)中成分波动对其自发发射特性的影响。我们证明了合金的随机波动会导致光学矩阵元素和发射能量的波动，并且这两个量是相关的。发现了平带量子阱和具有强量子受限斯塔克效应的量子阱在性质上的不同，并用电子和空穴的局域化行为来解释。

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Effect of alloy fluctuations in InGaN/GaN quantum wells on optical emission strength

In this work we present the effect of compositional fluctuations in InGaN/GaN quantum wells (QWs) on their spontaneous emission properties. We show that random alloy fluctuations lead to fluctuations of both the optical matrix elements and the emission energy and that the two quantities are correlated. A qualitatively different behaviour between flat band QWs and QWs with strong quantum confined Stark effect is found and explained by the localization behaviour of electrons and holes.

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Numerical Simulation of Optoelectronic Devices, 2014

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