典型AlGaAs/GaAs双半抛物量子阱激光器的光增益

Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI:10.1109/NUSOD.2014.6935365

A. Keshavarz, N. Zamani, H. Nadgaran

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引用次数: 3

摘要

本文计算了GaAs/AlxGa1-xAs对称双半抛物量子阱激光器的光学增益。为此，首先利用四阶龙格-库塔方法求解Schrödinger方程，得到双半抛物型量子阱中电子和空穴的能级及其对应的波函数。最后，我们介绍了量子阱的最佳结构，以获得最大的光增益，为量子阱激光器的设计提供参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optical gain in double semi-parabolic quantum well laser typical of AlGaAs/GaAs

In this paper, the optical gain in GaAs/AlxGa1-xAs symmetric double semi-parabolic quantum well laser is calculated. For this purpose, first the Schrödinger equation using the fourth-order Runge-Kutta method is done in order to obtain the energy levels and their corresponding wave functions of electrons and holes in double semi-parabolic quantum well. Finally, we introduce the optimum structure of quantum well to obtain the maximum optical gain, which can be useful for quantum well laser designing.

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Numerical Simulation of Optoelectronic Devices, 2014

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