准单晶锗作为硅基多结太阳能电池的界面层:电阻率和器件建模

M. Beattie, David G. Hobson, C. Valdivia, K. Hinzer, Youcef A. Bioud, A. Boucherif, D. Drouin, R. Arès
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引用次数: 2

摘要

研究了准单晶锗(qmcge)在高效、低成本多结太阳能电池设计中的潜在应用。对QMC - Ge界面层的形貌和电阻率进行了表征,并利用QMC - Ge界面层在Si衬底上进行了MJSCs的计算机模拟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling
Quasi-monocrystalline germanium (QMC Ge) is investigated for potential applications in high-efficiency, low-cost multi-junction solar cell design. The morphology and electrical resistivity of QMC Ge is characterized and computer simulations of MJSCs on Si substrates using QMC Ge interface layer are developed.
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