M. Beattie, David G. Hobson, C. Valdivia, K. Hinzer, Youcef A. Bioud, A. Boucherif, D. Drouin, R. Arès
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Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling
Quasi-monocrystalline germanium (QMC Ge) is investigated for potential applications in high-efficiency, low-cost multi-junction solar cell design. The morphology and electrical resistivity of QMC Ge is characterized and computer simulations of MJSCs on Si substrates using QMC Ge interface layer are developed.