阈值开关选择器石墨烯/h-BN/石墨烯的第一性原理研究及其性能改进

2021 International Conference on Electronics, Circuits and Information Engineering (ECIE) Pub Date : 2021-01-01 DOI:10.1109/ECIE52353.2021.00009

Lihua Huang, Yuehua Dai, Jian-wen Gao, Peng Wang, Renjie Ding, Feifei Wang

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引用次数: 1

摘要

在这项工作中，提出了一种具有简单单层石墨烯/h-BN/石墨烯结构的选择器。部分电荷密度(PCD)、DOS和PDOS证明，当阈值电压(Vth)为0.5V，非线性(NL)为104时，形成硼空位(Vb)导电灯丝(CF)。然后，我们发现在界面处8.33%浓度的Vb显著提高了选择器的性能(NL提高了10倍)。这对石墨烯/h-BN/石墨烯选择器的设计和优化具有一定的指导意义和价值。

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First-principles study on the threshold switch selector Graphene/h-BN/Graphene and the improvement of its performance

In this work, a selector has been proposed with a simple single-layer Graphene/h-BN/Graphene structure. The partial charge density (PCD), DOS and PDOS proved that the Boron vacancies (Vb) conductive filament (CF) is formed when the threshold voltage (Vth)is 0.5V, non-linearity (NL) is 104.Then, we found that Vb with a concentration of 8.33% at the interface improves the performance of the selector significantly (NL increased by 10 times). This work will be instructive and valuable for the design and optimization of Graphene/h-BN/Graphene selector.

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2021 International Conference on Electronics, Circuits and Information Engineering (ECIE)

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