{"title":"基于Ge/Si核/壳纳米线的肖特基二极管光电特性研究","authors":"Dongwoo Suh, Lin Chen, W. Lu","doi":"10.1109/ICSENST.2015.7438389","DOIUrl":null,"url":null,"abstract":"Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid infrared of 3 μm. The barrier of the present nanowire Schottky photodiode isj 1.5 volts. We scrutinized the electrical characteristics of the nanoscale Schottky junction both at forward and reverse bias ranges with thermionic model.","PeriodicalId":375376,"journal":{"name":"2015 9th International Conference on Sensing Technology (ICST)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoelectric characteristics of Schottky diode based on a Ge/Si core/shell nanowire\",\"authors\":\"Dongwoo Suh, Lin Chen, W. Lu\",\"doi\":\"10.1109/ICSENST.2015.7438389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid infrared of 3 μm. The barrier of the present nanowire Schottky photodiode isj 1.5 volts. We scrutinized the electrical characteristics of the nanoscale Schottky junction both at forward and reverse bias ranges with thermionic model.\",\"PeriodicalId\":375376,\"journal\":{\"name\":\"2015 9th International Conference on Sensing Technology (ICST)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 9th International Conference on Sensing Technology (ICST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENST.2015.7438389\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 9th International Conference on Sensing Technology (ICST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENST.2015.7438389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoelectric characteristics of Schottky diode based on a Ge/Si core/shell nanowire
Schottky photodiode fabricated with Ge/Si core/shell nanowires grown on Si (111) was quantitatively analyzed in terms of electrical properties as well as microstructure. The present device comprised of single nanowire grown by VLS process is quite sensitive enough to detect less than 1 pA at the mid infrared of 3 μm. The barrier of the present nanowire Schottky photodiode isj 1.5 volts. We scrutinized the electrical characteristics of the nanoscale Schottky junction both at forward and reverse bias ranges with thermionic model.
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