探索功率半导体器件安全工作区域的极限

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931560

C. Sandow, R. Baburske, F. Niedernostheide, F. Pfirsch, C. Tochterle

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引用次数: 4

摘要

功率器件的TCAD仿真是研究功率二极管和igbt破坏机理的重要工具。研究发现，成丝动力学是理解安全操作区域界限的关键。对于二极管和igbt，破坏性和非破坏性丝化机制被确定，并由此产生的破坏机制进行了讨论。

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Exploring the limits of the safe operation area of power semiconductor devices

TCAD simulations of power devices are an important tool to investigate destruction mechanisms of power diodes and IGBTs. It is found that the dynamics of filamentation is the key for understanding the limits of the safe operation area. For both diodes and IGBTs, destructive and non-destructive filamentation mechanisms are identified and the resulting destruction mechanisms are discussed.

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来源期刊

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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