Xin Sun, R. Fang, Yunhui Zhu, Xiao Zhong, Yuan Bian, Shengli Ma, M. Miao, J. Chen, Yan Wang, Yufeng Jin
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Electrical measurement and analysis of TSV/RDL for 3D integration
In this paper, electrical measurement and analysis of TSV/RDL is carried out, to evaluate the fabrication process and get a comprehensive understanding of electrical properties of TSV/RDL interconnect structures. DC resistance, leakage current and high frequency characterization are implemented. TSV shows a spreading distribution of DC resistance, with minimum of 4.3 mΩ. Leakage current of TSV reaches 150nA up to 30V without breakdown. Low substrate resistivity lowers the high frequency performance of TSV.
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