不连续碳膜真空等离子体处理后硅表面的结构

2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE) Pub Date : 2016-09-01 DOI:10.1109/APEDE.2016.7879046

D. Nefedov, V. Shanygin, S. Suzdaltsev, R. Yafarov

{"title":"不连续碳膜真空等离子体处理后硅表面的结构","authors":"D. Nefedov, V. Shanygin, S. Suzdaltsev, R. Yafarov","doi":"10.1109/APEDE.2016.7879046","DOIUrl":null,"url":null,"abstract":"The results of structuring silicon surface after vacuum-plasma treatment through discontinuous carbon film are shown. The geometric and concentration features of silicon juts are established. The range of radius of rounding is 0.5–5 mkm depending on type of surface and treatment. The range of concentration 6∗108–1.6∗109 cm2 depending on type of surface and treatment. As shown the freon plasma treatment give more preferable parameter of silicon juts. The temperature depending exert influence on silicon juts too. For instance the features of silicon juts created after freon plasma treatment and high temperature have minimum radius of rounding and maximum concentration.","PeriodicalId":231207,"journal":{"name":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structuring of silicon surface after vacuum-plasma treatment through discontinuous carbon film\",\"authors\":\"D. Nefedov, V. Shanygin, S. Suzdaltsev, R. Yafarov\",\"doi\":\"10.1109/APEDE.2016.7879046\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of structuring silicon surface after vacuum-plasma treatment through discontinuous carbon film are shown. The geometric and concentration features of silicon juts are established. The range of radius of rounding is 0.5–5 mkm depending on type of surface and treatment. The range of concentration 6∗108–1.6∗109 cm2 depending on type of surface and treatment. As shown the freon plasma treatment give more preferable parameter of silicon juts. The temperature depending exert influence on silicon juts too. For instance the features of silicon juts created after freon plasma treatment and high temperature have minimum radius of rounding and maximum concentration.\",\"PeriodicalId\":231207,\"journal\":{\"name\":\"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEDE.2016.7879046\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE.2016.7879046","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

给出了真空等离子体处理不连续碳膜后硅表面结构的结果。建立了硅尖的几何特征和浓度特征。圆整半径范围为0.5 - 5mkm，具体取决于表面类型和处理方式。浓度范围6 * 108-1.6 * 109 cm2取决于表面类型和处理。结果表明，氟利昂等离子体处理能得到较好的硅突参数。温度对硅尖也有影响。例如，氟利昂等离子体处理和高温后形成的硅突具有最小的圆角半径和最大的浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Structuring of silicon surface after vacuum-plasma treatment through discontinuous carbon film

The results of structuring silicon surface after vacuum-plasma treatment through discontinuous carbon film are shown. The geometric and concentration features of silicon juts are established. The range of radius of rounding is 0.5–5 mkm depending on type of surface and treatment. The range of concentration 6∗108–1.6∗109 cm2 depending on type of surface and treatment. As shown the freon plasma treatment give more preferable parameter of silicon juts. The temperature depending exert influence on silicon juts too. For instance the features of silicon juts created after freon plasma treatment and high temperature have minimum radius of rounding and maximum concentration.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 International Conference on Actual Problems of Electron Devices Engineering (APEDE)

自引率

0.00%

发文量