NREL CIS研究进展

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-12-31 DOI:10.1109/PVSC.1997.654092

K. Ramanathan, R. Bhattacharya, J. Granata, J. Webb, D. Niles, M. Contreras, H. Wiesner, F. Hasoon, R. Noufi

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引用次数: 26

摘要

本文总结了NREL CIS团队在三个主要领域的研究:吸收体沉积;了解化学浴沉积(CBD) CdS在CIS结中的作用;以及开发没有cd的设备。低成本、可扩展的吸收剂制造工艺包括溅射、电沉积(ED)和紧密间隔升华(CSS)。研究了CBD和CIS之间的相互作用，结果表明Cd可能有助于形成界面。我们还开发了一种制造效率为13.5%的ZnO/CulnGaSe/sub 2/器件的工艺，无需cd或其他缓冲层。

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Advances in the CIS research at NREL

This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between the CBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CulnGaSe/sub 2/ device without CdS or other buffer layers.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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