补偿LTPS tft特性变化和电压降的新型AMOLED像素电路

Jixiang Wu, Shuiping Yi, Congwei Liao, Xinxin Huo, Ying Wang, Shengdong Zhang
{"title":"补偿LTPS tft特性变化和电压降的新型AMOLED像素电路","authors":"Jixiang Wu, Shuiping Yi, Congwei Liao, Xinxin Huo, Ying Wang, Shengdong Zhang","doi":"10.23919/AM-FPD.2018.8437404","DOIUrl":null,"url":null,"abstract":"A voltage-programmed AMOLED pixel circuit to compensate the electrical characteristics variations of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) is proposed. This circuit features a voltage charging process of the storage capacitor (i.e. C1) in the compensation process, which is strongly dependent on the threshold voltage and mobility of the driving TFT, and a charge sharing process between C1 and the gate electrode of the driving transistor. The proposed circuit requires relative simple external driving circuits as only scanning signals of two adjacent gate lines (i.e. SCAN[n] and SCAN[n+1]) and one light emitting signal (i.e. EM[n]) are used. In addition, the voltage drop of the power line can also be compensated by this new circuit. The simulation results demonstrate that the relative current error rates are less than 7.4% and 6% for Vth variations of ±0.3V and mobility variations of ±10%, respectively.","PeriodicalId":221271,"journal":{"name":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"76 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"New AMOLED Pixel Circuit to Compensate Characteristics Variations of LTPS TFTs and Voltage Drop\",\"authors\":\"Jixiang Wu, Shuiping Yi, Congwei Liao, Xinxin Huo, Ying Wang, Shengdong Zhang\",\"doi\":\"10.23919/AM-FPD.2018.8437404\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A voltage-programmed AMOLED pixel circuit to compensate the electrical characteristics variations of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) is proposed. This circuit features a voltage charging process of the storage capacitor (i.e. C1) in the compensation process, which is strongly dependent on the threshold voltage and mobility of the driving TFT, and a charge sharing process between C1 and the gate electrode of the driving transistor. The proposed circuit requires relative simple external driving circuits as only scanning signals of two adjacent gate lines (i.e. SCAN[n] and SCAN[n+1]) and one light emitting signal (i.e. EM[n]) are used. In addition, the voltage drop of the power line can also be compensated by this new circuit. The simulation results demonstrate that the relative current error rates are less than 7.4% and 6% for Vth variations of ±0.3V and mobility variations of ±10%, respectively.\",\"PeriodicalId\":221271,\"journal\":{\"name\":\"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"76 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AM-FPD.2018.8437404\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2018.8437404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

提出了一种电压程序化的AMOLED像素电路,用于补偿低温多晶硅薄膜晶体管的电特性变化。该电路具有补偿过程中存储电容(即C1)的电压充电过程,该过程强烈依赖于驱动TFT的阈值电压和迁移率,以及C1与驱动晶体管栅极之间的电荷共享过程。所提出的电路需要相对简单的外部驱动电路,因为只使用两个相邻栅极线(即SCAN[n]和SCAN[n+1])的扫描信号和一个发光信号(即EM[n])。此外,这种新型电路还可以对电源线的电压降进行补偿。仿真结果表明,在电压变化±0.3V和迁移率变化±10%时,相对电流误差率分别小于7.4%和6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New AMOLED Pixel Circuit to Compensate Characteristics Variations of LTPS TFTs and Voltage Drop
A voltage-programmed AMOLED pixel circuit to compensate the electrical characteristics variations of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) is proposed. This circuit features a voltage charging process of the storage capacitor (i.e. C1) in the compensation process, which is strongly dependent on the threshold voltage and mobility of the driving TFT, and a charge sharing process between C1 and the gate electrode of the driving transistor. The proposed circuit requires relative simple external driving circuits as only scanning signals of two adjacent gate lines (i.e. SCAN[n] and SCAN[n+1]) and one light emitting signal (i.e. EM[n]) are used. In addition, the voltage drop of the power line can also be compensated by this new circuit. The simulation results demonstrate that the relative current error rates are less than 7.4% and 6% for Vth variations of ±0.3V and mobility variations of ±10%, respectively.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信