Raghu Dharmavarapu, S. Ng, S. Bhattacharya, S. Juodkazis
{"title":"用于涡束产生的硅基超表面","authors":"Raghu Dharmavarapu, S. Ng, S. Bhattacharya, S. Juodkazis","doi":"10.1117/12.2541234","DOIUrl":null,"url":null,"abstract":"Silicon metasurfaces were fabricated on fused silica substrates by using sputtering, electron beam lithography and reactive ion etching. A chromium etch mask was used to protect the silicon during plasma etching. We designed a hologram with phase range of 0 - 1.17π to generate a higher order Bessel beam. The device produced the expected beam profile and the presence of charge 3 was confirmed using a interference test. Tests on spiral plate devices were less successful owing to the thickness non-uniformity in the sputtered Si film.","PeriodicalId":131350,"journal":{"name":"Micro + Nano Materials, Devices, and Applications","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon-based metasurfaces for vortex beam generation\",\"authors\":\"Raghu Dharmavarapu, S. Ng, S. Bhattacharya, S. Juodkazis\",\"doi\":\"10.1117/12.2541234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon metasurfaces were fabricated on fused silica substrates by using sputtering, electron beam lithography and reactive ion etching. A chromium etch mask was used to protect the silicon during plasma etching. We designed a hologram with phase range of 0 - 1.17π to generate a higher order Bessel beam. The device produced the expected beam profile and the presence of charge 3 was confirmed using a interference test. Tests on spiral plate devices were less successful owing to the thickness non-uniformity in the sputtered Si film.\",\"PeriodicalId\":131350,\"journal\":{\"name\":\"Micro + Nano Materials, Devices, and Applications\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro + Nano Materials, Devices, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2541234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro + Nano Materials, Devices, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2541234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon-based metasurfaces for vortex beam generation
Silicon metasurfaces were fabricated on fused silica substrates by using sputtering, electron beam lithography and reactive ion etching. A chromium etch mask was used to protect the silicon during plasma etching. We designed a hologram with phase range of 0 - 1.17π to generate a higher order Bessel beam. The device produced the expected beam profile and the presence of charge 3 was confirmed using a interference test. Tests on spiral plate devices were less successful owing to the thickness non-uniformity in the sputtered Si film.