用于涡束产生的硅基超表面

Raghu Dharmavarapu, S. Ng, S. Bhattacharya, S. Juodkazis
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引用次数: 0

摘要

采用溅射、电子束刻蚀和反应离子刻蚀技术在熔融二氧化硅衬底上制备了硅超表面。在等离子体刻蚀过程中,采用铬刻蚀掩膜对硅进行保护。为了产生高阶贝塞尔光束,我们设计了相位范围为0 ~ 1.17π的全息图。该装置产生了预期的光束轮廓,并且通过干涉测试确认了电荷3的存在。由于溅射硅薄膜的厚度不均匀,在螺旋板器件上的测试不太成功。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon-based metasurfaces for vortex beam generation
Silicon metasurfaces were fabricated on fused silica substrates by using sputtering, electron beam lithography and reactive ion etching. A chromium etch mask was used to protect the silicon during plasma etching. We designed a hologram with phase range of 0 - 1.17π to generate a higher order Bessel beam. The device produced the expected beam profile and the presence of charge 3 was confirmed using a interference test. Tests on spiral plate devices were less successful owing to the thickness non-uniformity in the sputtered Si film.
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