采用SiGe:C双极晶体管差分对的面向dds的相位-幅度转换器

S. Thuries, É. Tournier
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引用次数: 9

摘要

本文报道了一种采用双极晶体管差分对和8位数模转换器的相幅转换器。由于消除了ROM和/或复杂的计算电路,这种技术在功耗和芯片尺寸方面提供了显著的节省。使直接数字合成器的设计适用于微波无线系统。电路采用0.25 /spl μ / BiCMOS SiGe: C工艺处理。测量到的一次谐波抑制和二次谐波抑制分别为-37 dBc和-63 dBc。8位数模转换器的积分非线性和微分非线性误差均在1lsb以下。电路功耗为115 mW,使用单2.7 V电源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A DDS-oriented phase-to-amplitude converter using a SiGe:C bipolar transistors differential pair
A phase-to-amplitude converter using a bipolar transistor differential pair with an 8-bits digital-to-analog converter is reported. This technique provides significant saving in power consumption and die size due to the elimination of the ROM and/or complex compute circuit. It renders the design of direct digital synthesizer usable for microwave wireless systems. The circuit has been processed in 0.25 /spl mu/ BiCMOS SiGe: C technology. The measured rejection for the first and the second harmonic is respectively -37 dBc and -63 dBc. The 8-bits D/A converter integral non-linearity and differential non-linearity errors are under 1 LSB. The circuit power consumption is 115 mW and operates from a single 2.7 V supply.
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